收藏本站
VSLY3850
200
180
160
140
120
100
www.vishay.com
120
100
80
60
Vishay Semiconductors
80
60
40
20
0
R thJA = 300 K/W
40
20
0
R thJA = 300 K/W
0
10
20
30
40
50
60
70 80
90 100
0
10
20 30 40
50 60 70 80
90 100
22322
T amb - Ambient Temperature (°C)
22323
T amb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V F
TEST CONDITION
I F = 100 mA, t p = 20 ms
I F = 1 A, t p = 100 μs
I F = 1 mA
I F = 10 mA
SYMBOL
V F
V F
TK VF
TK VF
MIN.
TYP.
1.65
2.9
- 1.45
- 1.25
MAX.
1.9
UNIT
V
V
mV/K
mV/K
Reverse current
I R
not designed for reverse operation
μA
Junction capacitance
V R = 0 V, f = 1 MHz,
E = 0 mW/cm 2
C J
125
pF
Radiant intensity
Radiant power
Temperature coefficient of radiant
power
I F = 100 mA, t p = 20 ms
I F = 1 A, t p = 100 μs
I F = 100 mA, t p = 20 ms
I F = 1 mA
I e
I e
φ e
TK ? e
35
70
600
55
- 0.35
105
mW/sr
mW/sr
mW
%/K
Angle of half intensity
?
± 18
deg
Peak wavelength
Spectral bandwidth
Temperature coefficient of l p
Rise time
Fall time
I F = 30 mA
I F = 30 mA
I F = 30 mA
I F = 100 mA, 20 % to 80 %
I F = 100 mA, 20 % to 80 %
λ p
Δλ
TK λ p
t r
t f
840
850
30
0.25
10
10
870
nm
nm
nm
ns
ns
Rev. 1.2, 28-Mar-13
2
Document Number: 82395
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
VSLY5850 IR EMITTER 850NM HIGH SPEED DIP
VSMY2850G IR EMITTER 850NM HIGH SPEED SMD
VSMY7850X01-GS08 IR EMITTER 850NM HIGH SPEED SMD
VSOP38336 IC SIGNAL CONDITIONING 36KHZ QFN
WALLS-C4600-001 SYNJETWIRE HARNESS 4WIRE 600MM
WIT2410SDK DEVELOPMENT KIT, 2 WIT2410M MODU
WIT2411DK DEVELOPMENT KIT, 2 WIT2411M MODU
WIT2411SDK DEVELOPMENT KIT, 2 WIT2411M MODU
相关代理商/技术参数
VSLY5850 功能描述:红外发射源 High Speed Emitter 5V 190mW 850nm 3Deg RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
VSM 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Precision Foil Wraparound Surface Mount Chip Resistor with TCR of ± 2 ppm/°C and Load Life Stability of ± 0.01 % (100 ppm)
VSM0026 制造商:Panasonic Industrial Company 功能描述:SWITCH
VSM0027 制造商:Panasonic Industrial Company 功能描述:SWITCH
VSM0805 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Bulk Metal Foil Technology Discrete Surface Mount Chip Resistors
VSM080510K000QB 制造商:Vishay Precision Group Inc 功能描述:RES MTLFOL 0805 10K OHM 0.02% 1/20W 2PPM/ C SMD - Bulk
VSM080510K500TBT 制造商:Vishay Precision Group 功能描述:RES MTLFOL 0805 10.5K OHM 0.01% 1/20W 2PPM/ C SMD - Tape and Reel
VSM080511K000FBT 制造商:Vishay Precision Group Inc 功能描述:RES MTLFOL 0805 11K OHM 1% 1/20W 2PPM/ C SMD - Custom Tape W/Leader